基于区间数据分析的各学科期刊发展现状研究

由于学科的自身特点和统计源的学科结构特点,不同学科期刊具有显著差异。但由于期刊数量庞大,评价指标多种多样,很难从宏观上把握各学科期刊的整体特点,对学科间差异给出科学的判断。本文以SCI期刊为研究对象,用区间数据代表各学科期刊,采用因素区间数据PCA算法探寻反映期刊水平的关键指标,并利用区间数据投影的方式绘制主平面图,反映各学科期刊的整体特点及我国期刊在国际上的地位。     

居民消费的习惯形成与实际经济周期模型的求解分析——一个基于三部门RBC模型的研究

结合H-P滤波法和King,Plosser&.Robelo(1987)的研究,探讨了一个求解引入居民消费的习惯形成和存在稳态趋势增长的RBC模型的对数线性化方法,并利用该方法求解引入习惯形成和政府支出冲击的三部门RBC模型来分析中国1979-2009年间宏观经济波动.研究表明:这个方法求解本文模型的预测结果与中国的特征事实较一致;与NHG方法求解的预测结果相比较,二者存在明显的差异;对中国经济的解释力要强于NHG方法求解的预测结果.     

关于广义鞍点问题的HSS迭代方法的收缩因子(英文)

白中治等提出了解非埃尔米特正定线性方程组的埃尔米特和反埃尔米特分裂(HSS)迭代方法(Bai Z Z,Golub G H,Ng M K.Hermitian and skew-Hermitian splitting methodsfor non-Hermitian positive definite linear systems.SIAM J.Matrix Anal.Appl.,2003,24:603-626).本文精确地估计了用HSS迭代方法求解广义鞍点问题时在加权2-范数和2-范数下的收缩因子.在实际的计算中,正是这些收缩因子而不是迭代矩阵的谱半径,本质上控制着HSS迭代方法的实际收敛速度.根据文中的分析,求解广义鞍点问题的HSS迭代方法的收缩因子在加权2-范数下等于1,在2-范数下它会大于等于1,而在某种适当选取的范数之下,它则会小于1.最后,用数值算例说明了理论结果的正确性.     

(0, mf-k+1)-图中具有正交(0,f)-因子分解的子图

设G是一个简单图, f是定义在V(G)上的整数值函数,且m是大于等于2的整数. 讨论(0, mf-k+1)-图G的正交因子分解, 并且证明了对任意的1≤k≤m, (0, mf-k+1)-图G中存在着一个子图R, 使得R有一个(0,f)-因子分解正交于图G中的任意一个k-子图H.     

Relativization of dynamical properties

In the past twenty years,great achievements have been made by many researchers in the studies of chaotic behavior and local entropy theory of dynamical systems.Most of the results have been generalized to the relative case in the sense of a given factor map.In this survey we offer an overview of these developments.     

Analysis on electrical characteristics of high-voltage GaN-based light-emitting diodes

<正>In order to investigate their electrical characteristics,high-voltage light-emitting-diodes(HV-LEDs) each containing four cells in series are fabricated.The electrical parameters including varying voltage and parasitic effect are studied. It is shown that the ideality factors(IFs) of the HV-LEDs with different numbers of cells are 1.6,3.4,4.7,and 6.4.IF increases linearly with the number of cells increasing.Moreover,the performance of the HV-LED with failure cells is examined.The analysis indicates that the failure cell has a parallel resistance which induces the leakage of the failure cell.The series resistance of the failure cell is 76.8Ω,while that of the normal cell is 21.3Ω.The scanning electron microscope(SEM) image indicates that different metal layers do not contact well.It is hard to deposit the metal layers in the deep isolation trenches.The fabrication process of HV-LEDs needs to be optimized.     

Symmetric and skew-symmetric weight functions in 2D perturbation models for semi-infinite interfacial cracks

In this paper we address the vector problem of a 2D half-plane interfacial crack loaded by a general asymmetric distribution of forces acting on its faces. It is shown that the general integral formula for the evaluation of stress intensity factors, as well as high-order terms, requires both symmetric and skew-symmetric weight function matrices. The symmetric weight function matrix is obtained via the solution of a Wiener–Hopf functional equation, whereas the derivation of the skew-symmetric weight function matrix requires the construction of the corresponding full field singular solution.The weight function matrices are then used in the perturbation analysis of a crack advancing quasi-statically along the interface between two dissimilar media. A general and rigorous asymptotic procedure is developed to compute the perturbations of stress intensity factors as well as high-order terms.     

Strain-rate intensity factor in compression of a layer of a plastic material between cylindrical surfaces

A model problem for a rigid perfectly/plastic material is obtained. Based on this solution, it is possible to estimate the influence of the friction surface curvature and one of the types of additional rotational motion of the friction surface on the strain-rate intensity factor. __________ Translated from Prikladnaya Mekhanika i Tekhnicheskaya Fizika, Vol. 50, No. 3, pp. 171–180, May–June, 2009.     

Interface crack problems for mode II of double dissimilar orthotropic composite materials

The fracture problems near the similar orthotropic composite materials are interface crack tip for mode Ⅱ of double disstudied. The mechanical models of interface crack for mode Ⅱ are given. By translating the governing equations into the generalized hi-harmonic equations, the stress functions containing two stress singularity exponents are derived with the help of a complex function method. Based on the boundary conditions, a system of non-homogeneous linear equations is found. Two real stress singularity exponents are determined be solving this system under appropriate conditions about bimaterial engineering parameters. According to the uniqueness theorem of limit, both the formulae of stress intensity factors and theoretical solutions of stress field near the interface crack tip are derived. When the two orthotropic materials are the same, the stress singularity exponents, stress intensity factors and stresses for mode II crack of the orthotropic single material are obtained.     

Fracture mechanics analysis on Smart-Cut^R technology. Part 2： Effect of bonding flaws

In Part 2 of the paper on the Smart-Cut process, the effects of bonding flaws characterized by the size and internal pressure before and after splitting are studied by using fracture mechanics models. It is found that the bonding flaws with large size are prone to cause severe deviation of defect growth, leading to a non-transferred area of thin layer when splitting. In a practical Smart-Cut process where the internal pressure of bonding flaws is very small, large interfacial defects always promote defect growth in the splitting process. Meanwhile, increasing the internal pressure of the bonding flaws decreases the defect growth and its deviation before splitting. The mechanism of relaxation of stiffener constraint is proposed to clarify the effect of bonding flaws. Moreover, the progress of the splitting process is analyzed when bonding flaws are present. After splitting, those bonding flaws with large size and high internal pressure are vulnerable for the blistering of the thin film during high-temperature annealing.